A METHOD FOR DETERMINING THE MAGNITUDE OF THE RAMAN SCATTERING MATRIX ELEMENT FOR DIAMOND-TYPE CRYSTALS.

Abstract

A discussion is presented of the mechanisms for the electric field induced first order infrared absorption band in diamond-type crystals. The strength of the induced band is determined by the dependence of the electronic polarization on relative atomic displacements in the unit cell. A measurement of the absorption constant of the induced band should therefore provide quantitative information about the first order Raman scattering matrix elements. The phenomenon of field induced infrared absorption bands should also exist for Raman active modes in other centrosymmetric crystal structures, and for Raman active impurity modes. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1965
Accession Number
AD0471317

Entities

People

  • E. Burstein
  • S. Ganesan

Organizations

  • University of Pennsylvania

Tags

DTIC Thesaurus Topics

  • Absorption
  • Crystal Structure
  • Crystals
  • Displacement
  • Electric Fields
  • Electromagnetic Scattering
  • Impurities
  • Measurement
  • Polarization
  • Raman Scattering
  • Scattering

Fields of Study

  • Physics

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Nanoscale Plasmonic Nanotechnology
  • Spectroscopy.

Technology Areas

  • Microelectronics