EXCESS NOISE IN SEMICONDUCTORS.
Abstract
A continuing research program studying random electrical noise phenomena in solids has concentrated on 1/f noise in semiconductors and electrical noise in photoconductors together with several unique fluctuation effects in other solids. A total of 30 published papers and seven technical conferences, as well as four Ph.D. theses have resulted from the program effort. Recent work has concentrated on optical emission fluctuations in germanium single crystals. A correlation between optical emission fluctuations and forward current noise in the junction has been observed. Characteristic time constants of the order of 12 and 0.45 microseconds, presumably associated with carrier transitions within the junction region are apparent in the results. A new technique to measure infrared intensity using an uncalibrated detector involves simultaneous signal response and detector noise measurements. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 15, 1965
- Accession Number
- AD0474652
Entities
People
- James J. Brophy
Organizations
- IIT Research Institute