DEVELOPMENT OF AN ACTIVE THIN-FILM DEVICE.
Abstract
Epitaxial techniques were utilized in an effort to produce an active thin-film device using the lead-salt semiconductors (PbS, PbTe, PbSe). The project was centered around the prototype development of a superior single-crystal thin-film, field-effect transistor. Field-effect modulation was observed and triode characteristics obtained in some devices in both enhancement and depletion modes of operation. Saturation of characteristics (pentode behavior) could not be observed without dielectric breakdown of the gate insulator film. Drift effects were noted. The operating units had low transconductance values. More effort is required to fully develop this device, concentrating on the undesirable drift effects,unstable insulator films, and control of film carrier concentration. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 27, 1965
- Accession Number
- AD0474743
Entities
People
- James F. Skalski
Organizations
- Naval Ordnance Laboratory