ELECTRON INJECTION LASER.

Abstract

This report describes the work done in the first quarter of the contract between June 1 and August 31, 1965. Studies have been undertaken to reduce the temperature dependence of GaAs injection laser diodes, resulting in lower absolute values at room temperature. The performance of single step diffused diodes is compared with that of solution regrown ones. Data about spontaneous linewidth, voltage-current relationship and temperature dependence of laser thresholds are given. Experiments are described to determine the nature of traps involved in the turn on delay of lasers, discussed in a previous report. Finally, conditions are given for the fabrication of planar laser structures which are designed for an improved high power performance. Some preliminary results on these diodes are reported. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1965
Accession Number
AD0474829

Entities

People

  • H. Rupprecht

Organizations

  • IBM Thomas J. Watson Research Center

Tags

DTIC Thesaurus Topics

  • Amplifiers
  • Contracts
  • Electronic Equipment
  • Electronics
  • Electrons
  • Fabrication
  • Laser Diodes
  • Lasers
  • Light Amplifiers
  • Light Sources
  • Optical Equipment
  • Optoelectronic Devices
  • Semiconductor Devices
  • Semiconductor Lasers

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy
  • Microelectronics