ION IMPLANTATION JUNCTION TECHNIQUES.
Abstract
This program is directed at increasing state-of-the-art efficiency of solar cells produced by ion implantation techniques and at fabrication of thin film silicon solar cells by plasma deposition. In the single-crystal program, the semi-production apparatus underwent extensive debugging and is now operational for cell production. Six panels for flight evaluation of cell performance were completed. Investigations have continued on optimizing cell efficiencies, both in lopex and dendritic material, on radiation damage studies and on improved cell configurations. Notable results have been achieved for an integral cover-slip configuration, with 1 mil thick fused SiO2 layers being successfully applied. Work on the thin film cells has been terminated since it has been demonstrated that a long-term development program would be required to produce competitive cells by the plasma deposition method. Alternative methods such as thin single-crystal cells now look more promising as a means of achieving high power to weight ratios. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 15, 1965
- Accession Number
- AD0475250
Entities
People
- B. S. Quintal
- J. L. Surette
- J. T. Burrill
- S. Harrison
- W. J. King