COMPUTER SIMULATION OF THE SPUTTERING PROCESS.
Abstract
The sputtering of Cu fcc (110), (100) and (111) surfaces by 1- to 10-keV A(+) ions at normal incidence has been investigated by high-speed digital computer techniques. The interatomic repulsions are described by Born-Mayer potentials. The shape of the sputtering ratio curves are in close agreement with the data of Magnuson and Carlston. Ejection patterns in accord with experimental observations are predicted. There is evidence that the sputtering mechanism is not the result of momentum focusing. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1965
- Accession Number
- AD0475397
Entities
People
- Norman S. Levy
Organizations
- Naval Postgraduate School