MANUFACTURING IN-PROCESS CONTROL AND MEASURING TECHNIQUES FOR INTEGRAL ELECTRONICS (STRUCTURAL DEFECTS IN SINGLE CRYSTAL SEMICONDUCTORS).
Abstract
The program's purpose is to develop special non-destructive in-process infrared and X-ray measuring techniques for detecting defects in silicon and gallium arsenide used in integrated circuit fabrication. Infrared techniques have been found quite useful for in-process detection of bulk defects, while it has been found that X-ray diffraction methods for detection of crystallographic defects are better suited to quality-sampling-type use. The Second (Evaluation) Phase resulted in the determination of detection sensitivity limits for the Lang X-ray technique for use in the detection of dislocations, plastic deformation, stacking faults, impurity precipitation and segregation, polycrystallinity and presence of grain boundaries, twin boundaries and subgrain boundaries, and surface defects in silicon. Sensitivity limits for bulk defect determination in Gallium Arsenide by the Borrmann X-ray techniques are also discussed. Limits have been determined also for the sensitivity of detection of mechanical defects, residual stress, and impurity content in silicon and gallium arsenide by infrared transmission microscopy, and the use of this tool is discussed. Finally, the detection sensitivity of the infrared birefringence technique is discussed. The Demonstration Phase consisted of processing some 400 slices of silicon integrated circuit wafers through these tests as a part of their standard production process. Slices contained circuits of three types. Distributions of IR and X-ray test results are shown. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1965
- Accession Number
- AD0475819
Entities
People
- F. Tausch
- Pei Wang
- R. Wolfson
Organizations
- Sylvania Electric Products