FAILURE MECHANISMS IN SEMICONDUCTOR DIODES.
Abstract
Efforts concern a program to investigate the physical and chemical mechanisms which contribute to long term degradation of diode parameters. The entire program includes work elements of isolation of the mechanisms, establishment of the mechanism characteristic rates, determination of probability of occurrence factors for processing variables and the proposal and verification of deterministic and probabilistic mathematical models including these factors. The first section of this report presents the background information for the silicon planar epitaxial diodes chosen as the vehicles for the program. The second section discusses the last manufacturing process steps and the test flow of the diodes. The results of the physics of failure studies and the planned work effort in this area are contained in the third section. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1965
- Accession Number
- AD0475992
Entities
People
- Byron L. Bair
Organizations
- General Electric