IMPURITY EFFECTS IN NEUTRON-IRRADIATED SILICON AND GERMANIUM.
Abstract
The influence of dopant impurities and oxygen on the degradation of the electrical properties of silicon by neutrons was investigated. Arsenic, phosphorous gallium and boron were utilized as dopants over a wide range of carrier concentrations in material grown by different techniques. The effects of neutron irradiation on carrier lifetime, mobility, and carrier concentration were measured as a function of temperature and annealing. No dependence of the rate of lifetime degradation on impurity was observed, although some differences were seen in carrier concentration and mobility changes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1965
- Accession Number
- AD0476458
Entities
People
- C. A. Germano
- O. L. Curtis Jr.
- R. F. Bass