MATERIALS RESEARCH AT THE SERVICES ELECTRONICS RESEARCH LABORATORY, BALDOCK, HERTFORDSHIRE.
Abstract
This report centers on the epitaxial preparations of doped and pure GaAs in the materials division of the Services Electronics Research Laboratory. It describes efforts to expand the epitaxial process to mixed crystals Ga(AsxP1-x) which will be used for electroluminescent diodes in the visible range. Ion implantation into ZnSe represents an alternate approach. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 30, 1965
- Accession Number
- AD0476672
Entities
People
- Bernhard O. Seraphin
Organizations
- Office of Naval Research