IMPROVED THIN-FILM SOLAR CELLS.
Abstract
During this contract thin-film GaAs solar cells using semitransparent Pt layers as the barrier contact have been made and investigated to improve their photovoltaic characteristics. Studies of the GaAs film, grown by the close-spaced oxide transport process, and the barrier contact structure, consisting of the Pt film, gridding and antireflection coating, led to the fabrication of cells with the following maximum efficiencies: 5.1% for 0.2 cc, 4.5% for 2.0 cc and 3% for 4.0 cc. It was shown that degradation of these cells in room ambient is due to the post-evaporation etching used during the fabrication process. Stable cells were made with efficiencies of 2.8% for areas of 2.0 cc. Tests were made to evaluate the effects of temperature, vacuum, moisture, ultraviolet light, and proton radiation on the Pt-GaAs structure. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1966
- Accession Number
- AD0476696
Entities
People
- David M. Perkins
- Edward F. Pasierb
- Gerald Noel
- William L. Hui
Organizations
- Sarnoff Corporation