Design and Compensating Techniques Investigation for High Temperature Operation of P-Silicon Pressure Transducer
Abstract
Theoretical study and experimental work indicate that a p-n junction type diffused semiconductor sensor is not feasible for high temperature operation above 600 or 700 deg F. The generation of electron hole pairs destroys the isolation property of the p-n junction. Consequently, emphasis was shifted to work on the development of a semiconductor pressure transducer with bonded strain sensors. The bulk resistivity of the silicon sensor was established together with the technique of effecting a high temperature ohmic contact. A broad evaluation of the substrate materials was made before the final selection of a special tungsten allow stock for actual transducer fabrication. Prototype transducers were built and tested at temperatures above 1000 deg F. The data from temperature compensation experiments showed that the techniques and choice of materials will make high temperature pressure transducers which satisfy most of the requirements of the Statement of Work for this contract.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1965
- Accession Number
- AD0477749
Entities
People
- Frank L. Yuan