RADIATION EFFECTS ON THIN-FILM MICROELECTRONICS.
Abstract
This report describes the initial effort on the program to evaluate the effects of transient radiation on thin-film passive components. A 30 pf, Al-SiO-Al capacitor deposited on an alumina substrate has been irradiated by a 600 KEV FXR pulse both in air and in vacuum at a pressure of 5 x 10 to the 5th power mm. Also, irradiations were performed with a 0.1 cm sheet of lead between the capacitor and the source of x-rays. Results of the test indicate (1) the predominant effect in vacuum is net electron emission or absorption depending on the ratio of electrons to photons in the impinging radiation beam, (2) these effects are not symmetric within the capacitor; that is, more electrons may be ejected or absorbed by one plate than by the other plate of the capacitor, and (3) in air the predominant effect is a radiation induced shunt resistance. A group of capacitors have been designed and are being fabricated to supply the necessary variations in parameters to separate the various effects. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1966
- Accession Number
- AD0478154
Entities
People
- Virgil H. Strahan