EFFECT OF RADIATION DAMAGE AND ANNEALING ON THE ELECTROLUMINESCENCE IN GAAS DIODES.
Abstract
The effect of radiation damage on the electroluminescence of lightly doped (N-10 to the 17th power cm to the minus 3) and heavily doped diodes has been determined. At 300 K, the intensity of lightly doped diodes is proportional to (1 + tau no Kp theta) to the minus 1 with tau no Kp ranging between 6.0 x 10 to the minus 15th power to 1.0 x 10 to the minus 15th power cm squared. The change in current of lightly doped diodes at 300 and 80 K is linear with tau. The energy of the peak intensity from heavily doped diodes (N-10 to the 18th power cm to the minus 3) at 296 K does not shift with voltage, and the intensity is proportional to exp qV/kT). The degradation of the emission of heavily doped diodes due to radiation damage suggests that the emission results partially from electrons injected into the p-type region and partially from recombination within the space charged region. The change in current due to irradiation is approximately proportional to tau exp(SV), where S is independent of temperature below 80 K but decreases at higher temperatures. It is possible to account for the bombardment increase in current in heavily doped diodes by assuming that carriers tunnel to defect centers introduced by the bombardment. Annealing at 300 C removes approximately 80% of the radiation damage responsible for the decrease in the 296 K intensity at a constant voltage for both types of diodes. The same annealing conditions remove essentially all the damage responsible for the current change in lightly doped diodes but only 60% of the damage in heavily doped diodes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1965
- Accession Number
- AD0478218
Entities
People
- Lee W. Aukerman
- Michael F. Millea
Organizations
- The Aerospace Corporation