DEVELOPMENT OF A C-BAND SOLID-STATE GENERATOR.
Abstract
This report falls under two main topics; they are (1) Tunnel-Diode Oscillator: Several diodes having peak currents of 250 mA and junction capacitances of 8-9.5 pF were tested in re-entrant strip-line circuits. Rf output powers of 7 mW and 5 mW were obtained at 4.5 GHz and 5.5 GHz, respectively. The same diodes were tested in coaxial circuits and 4.5-4.8 mW were obtained at 5.0 GHz. It became evident during these tests that 250 mA diodes would be very difficult to load properly since triggering of the oscillators by application of dc voltages was not reliable and we could not obtain the values of output power predicted by theory. We then tested 100 mA diodes in appropriately designed coaxial circuits. 4.5-4.6 mW Of rf power were obtained at 5.0 GHz and reliable triggering was realized. In spite of the fact that experimental results were not yet complete, the rf output was reasonably close to the 5.2 mW predicted by theory. Diodes with peak currents of 150 mA should therefore be a good compromise between power and ease of loading the diode correctly. (2) Solid State Oscillator: A transistor-oscillator transistor-amplifier driver was developed capable of a power output of 6 to 11 watts over an electronically tuned frequency range of 312 to 350 MHz. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1966
- Accession Number
- AD0478251
Entities
People
- Cheng Sun
- Donald E. Nelson
- Henry Johnson
Organizations
- Sarnoff Corporation