BURNOUT RESISTANT X BAND HOT CARRIER DETECTORS.
Abstract
Hot carrier detectors utilizing N(+) on N and N(+) on N on N(+) designs exhibited sensitivities of the order of -35 DBM for junction diameters of 0.001 inches diameter. Devices fabricated with a steep thermal gradient exhibited enhancements of 2 to 3 DB at a sensitivity of approximately -40 DBM. The model for enhancement suggests a Schottky Barrier metal-semiconductor design to produce a depletion region under the metal contact through the choice of metals and semiconductor resistivities. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 15, 1966
- Accession Number
- AD0478315
Entities
People
- C. Shulman
- D. Scaringella
- S. Denker