HOT-ELECTRON MILLIMETER DEVICES.
Abstract
A program is being conducted to explore the application of known hot-carrier effects in semiconductors to the development of new and improved microwave devices. The devices being investigated include modulators, mixers, harmonic generators, and detectors. Modulation indices of redesigned hot-carrier amplitude modulators were measured up to modulation frequencies of 1600 MHz. Three units exhibited modulation indices between 30 and 55% at 1600 MHz, and between 70 and 75% at 250 MHz. A fourth unit exhibited essentially the same modulation depth at 1600 MHz as at 250 MHz, i.e., approximately 80%. An evaluation of hot-carrier mixer sensitivity using various high-quality InSb semiconductor samples and several fabrication techniques is summarized. Experimental data are presented on the conversion loss and i.f resistance of the cooled InSb hot-carrier mixer as a function of local oscillator power level. The i.f. resistance of a hot-carrier mixer and a Schottky barrier mixer are compared as a function of local oscillator power. A theoretical analysis is presented which extends the range of validity of the so-called dc incremental method and the amplitude modulation method of measuring the conversion loss of a mixer. With peak input power on the order of 100 watts, the conversion efficiency of the harmonic generator is approximately -60 dB. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1966
- Accession Number
- AD0478507
Entities
People
- D. Fleri
- F. Drago
- L Cohen
- R. I. Harrison
- W. Hauer