GAAS LASER DIODES.
Abstract
Refinements in the experimental technique for growing p-n junctions from liquid solution resulted in highly uniform and dislocation-free n-layers on p-substrates. High pressure diffused laser diodes were fabricated with thresholds between 50 and 70 amperes at 300 degrees K, and typical power outputs of two watts with 50 nsec pulses and a repetition rate of 1000 pps. Some lasers, mounted on special headers containing a pulse transformer, were operated at 8000 pps with 100 nsec pulses producing a beam of 1.5 watt optical peak power within a beam angle of 12 degress. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1966
- Accession Number
- AD0478538
Entities
People
- R. A. Sehr
- W. J. Rundle