SEMICONDUCTOR MICROWAVE AMPLITUDE AND PHASE MODULATOR.
Abstract
Injection and extraction of carriers in bulk semiconductor and in point contact diodes were investigated and applied to the design of a millimeter-wave amplitude modulator and phase modulator. An analysis of amplitude and phase modulation using a waveguide uniformly loaded with bulk semiconductor was performed. The results indicated that amplitude modulation without appreciable phase modulation could be achieved. An analysis of carrier injection in a point contact pn(-)n(+) type structure was performed and indicated that modulation bandwidths extending well into the microwave range could be achieved. A point-contact amplitude injection modulator was designed and built and experiments were performed which demonstrated the capability of the device at modulation frequencies in the audio, video, uhf and microwave ranges. Measurement techniques were developed for determining drive power and modulation depth at high modulation frequencies. Modulation indices of between 30 and 75% have been measured for drive frequencies ranging from audio to 5 GHz. The insertion loss of the device is typically less than 5 db. Two basic phase-shifter configurations were studied: the transmission type and the reflection type. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1966
- Accession Number
- AD0479235
Entities
People
- R. Harrison