SOLID-STATE IMAGE INTENSIFIER PANEL.

Abstract

A solid-state image intensifier panel which is sensitive to radiation out to 1.7 microns is being developed. The detector is to be a heterojunction photodiode, the amplifier is to utilize thin-film transistors and the display is to be an electroluminescent panel. All of the components are thin-film devices which are being prepared by vacuum deposition. After considering the merits of a heterojunction photodetector, the most suitable materials are selected for a device sensitive to night-sky radiation out to 1.7 microns. The best heterojunction is composed of cadmium selenide on indium arsenide. Thin-film transistors have been produced which exhibit mutual transconductances 9f 900 micromhos, dynamic drain resistances of 6.25 kilohms, voltage amplification factors of 5.6 and input resistances greater than two megohms. A functioning experimental thin-film electroluminescent display panel has been produced which has resolutions of 55.5, 83.3 and 166.7 lines/inch. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 06, 1966
Accession Number
AD0479258

Entities

People

  • David M. Heinz
  • Henry J. Hebert
  • Winston N. Sharp

Tags

DTIC Thesaurus Topics

  • Amplifiers
  • Compound Semiconductors
  • Detectors
  • Films
  • Heterojunctions
  • Materials
  • Photodetectors
  • Semiconductors
  • Thin Film Transistors
  • Thin Films
  • Transistors
  • Vacuum Deposition

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Image Processing and Computer Vision.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition