LOW-NOISE L-BAND (WIDEBAND) TRANSISTOR AMPLIFIER.
Abstract
This report covers device characterization, directional coupler design, and amplifier matching network design for an octave bandwidth 1-2 GHz transistor amplifier. Y parameters and noise figure data for the L-148 germanium planar transistor are presented. Several coupler types are examined; one, the tandem coupler, should be significantly easier to build in thin-film circuits. The amplifier described should have a flat gain across the 1-2 GHz band. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1966
- Accession Number
- AD0479326
Entities
People
- Leslie R. Read
Organizations
- Texas Instruments