ADVANCED THIN-FILM SOLAR CELLS.
Abstract
During the first period under this contract, Pt-GaAs cells were made and investigated to improve their photovoltaic properties. Alternative film growth techniques and barriers were also studied to obtain an improved thin-film GaAs cell structure. Studies of Pt-GaAs cell stability have shown that Voc is reduced on exposure to hydrogen. A new vertical furnace was constructed for GaAs oxide transport which allowed significant improvement in film uniformity and easier growth of large-area films. Studies of the Mo substrate coating showed 100 A of Ge on 600 A of Sn to be the optimum coating. Other barriers investigated included Cu-GaAs contacts, diffused p-n junctions, and metal contacts to Cu-compensated GaAs films. One diffused junction cell had an efficiency of 4.9% on a net area basis. A new configuration was developed for 2-sq cm Pt-GaAs cells which allows for better array capabilities. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1966
- Accession Number
- AD0479820
Entities
People
- David M. Perkins
- Edward F. Pasierb
- Gerald Noel
- William L. Hui
Organizations
- Sarnoff Corporation