TRANSISTOR, FIELD EFFECT, INSULATOR GATE, 100-MC AMPLIFIER.
Abstract
The tetrode MOS transistor was developed as a 100-megacycle amplifier with low power dissipation. In an RF circuit, the device shows excellent cross modulation characteristics over a large attenuation range. With respect to power gain noise figure, RF stability, and long term stability, the tetrode is as good or better than full or partial gate MOS triodes. The device was designed to minimize parasitic capacitances resulting from gate overlap by incorporating an oxide step at the edge of the channel. Because of a trade off between gate breakdown (oxide thickness) and device performance, the device was fabricated with a gate breakdown of 60 volts. All other characteristics of device performance fulfill the original goals. Typically, the power gain is 20 dB, and the noise figure is 3.5 dB measured at VD=6 volts, ID=2 milliamperes and f=100 megacycles. The average transconductance is 3,000 micromhos and the device exhibits an AGC range of 40dB. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1966
- Accession Number
- AD0480416
Entities
People
- M. M. Mitchell
- N. H. Ditrick
- R. H. Dawson
- R. W. Ahrons