ACCELERATED TEST PROGRAM.
Abstract
A review of data and information gathered during previously conducted accelerated test programs has led to the formulation of degradation models for the parts under study. Long term constant stress tests, which were inactive for a 9 month period after accumulating 5000 to 9000 hours of test time at various stress conditions, were restarted. The effect of the passive period on the long term part parameter trends is discussed. Accelerated step stress test designs and analysis plans were formulated for metal film resistors and semiconductors and step-stress tests were initiated. Failure Mechanism Studies led to the formulation of a current conduction model for glass dielectric capacitors; the detection, possible source and estimated effects of phosphorous compounds on surface leakage of transistors; and low temperature characterization of diode surface leakage currents. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 10, 1964
- Accession Number
- AD0480798
Entities
People
- T. M. Walsh
Organizations
- General Electric