EPITAXIAL VAPOR GROWTH OF MONOCRYSTALLINE AG FOILS AND THE DEPENDENCE OF CONDENSATION STICKING COEFFICIENT ON CRYSTALLOGRAPHIC ORIENTATION.
Abstract
Pairs of thin oriented silver films of different lattice orientation were grown simultaneously by epitaxial condensation. Substrate temperatures of 460 C to 480 C with a deposition rate of 300 to 350 A per second were found to be the most successful epitaxy parameters. Comparison of the mass of differently oriented pairs grown at symmetrical stations revealed that the condensation sticking coefficient for the (100) plane is consistently about 3.8% less than for the (111) plane, indicating that the condensation sticking coefficient of Ag on Ag is a function of crystallographic orientation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1964
- Accession Number
- AD0481268
Entities
People
- Kenneth E. Cumblidge
Organizations
- Naval Postgraduate School