ION IMPLANTATION JUNCTION TECHNIQUES.
Abstract
This report describes investigations performed over a 16-month period on fabrication of n on p silicon single-crystal cells by ion implantation techniques and thin film cells by plasma deposition techniques. Although the process is still being optimized, ion implanted cells are already competitive with diffusion produced cells, with air mass zero (AM0) efficiencies of 11% having been achieved. A high current production machine capable of producing 10,000 cells/wk has been constructed and is being applied to further cell development. The process has been applied to dendritic material with AM0 efficiencies of >9.3% having been achieved. Using an ion beam high vacuum sputtering process, cells have been fabricated with 1 mil fused SiO2 integral cover slips and AM0 efficiencies of >10%. Functional films of both n and p-type silicon have been made. A variety of techniques for junction formation (growing, implantation, alloying, diffusion) have been studied with some very low efficiency cells (0.01%) being achieved. The primary problem preventing the achievement of higher efficiency was poor adhesion of the Si film to the metallic substrate.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1966
- Accession Number
- AD0482091
Entities
People
- J. T. Burrill
- P. Mcnally
- S. Harrison
- S. J. Solomon
- W. J. King