Parameters of Bipolar, Field Effect, and Unijunction Transistor Large Signal Models for Use in Transient Radiation Effects Analysis
Abstract
The purpose of this study was to measure the large signal equivalent circuit parameters and transient radiation response of selected semiconductor components. These measurements are to be used by the personnel of the Instrumentation Laboratories, Massachusetts Institute of Technology, to select components in the development of the SABRE guidance system. The devices measured include three types: bipolar, field effect, and unijunction transistors. The difficulties experienced in the study were due to the lack of acceptable equivalent circuit models and measurement techniques. These difficulties were overcome by the development of both acceptable models and measurement techniques. The models derived and parameter measurements are presented in this report.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1966
- Accession Number
- AD0482357
Entities
People
- Jerry L. Hill
Organizations
- Air Force Research Laboratory