DEVELOPMENT OF INTEGRATED CIRCUITS UTILIZING COMPLEMENTARY TRANSISTORS.

Abstract

Operating curves for the boron doped, phosphorus doped and undoped silane systems have been established. Substrates housing opposite conductivity (P and N) regions have been fabricated during this quarter and complementary fabrication has begun. The complementary symmetry amplifier has been transformed to a monolithic layout and masks have been ordered. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 31, 1966
Accession Number
AD0482993

Tags

DTIC Thesaurus Topics

  • Amplifiers
  • Circuits
  • Conductivity
  • Electronic Amplifier
  • Electronic Equipment
  • Electronics
  • Fabrication
  • Integrated Circuits
  • Phosphorus
  • Semiconductor Devices
  • Solid State Electronics
  • Substrates
  • Symmetry
  • Transistors

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.