GUNN EFFECT DEVICES.

Abstract

The circuit behavior of a semiconductor bulk device operating in the region of field-controlled negative conductivity is analyzed theoretically and experimentally. It is concluded that the external rf impedance to the device has a strong influence on the field-domain performance leading to three different operation modes: (1) amplification, (2) domain-movement oscillations with limited external tuning, (3) negative-conductance oscillations with wide range tuning. The thermal performance of CW devices is analyzed for design purposes. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1966
Accession Number
AD0483028

Entities

People

  • R. W. H. Engelmann

Organizations

  • Hp

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplification
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Conductivity
  • Electronics
  • Gunn Effect
  • Impedance
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Oscillation
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Plasma Physics.

Technology Areas

  • Microelectronics