INSULATED GATE FIELD EFFECT TRANSISTOR RF TUNER.
Abstract
Linvill's relationship of transistor parameters to amplifier performance (extended to the potentially unstable case by introduction of a new stability factor), Stern's work on stability and power gain of tuned amplifiers and a sequence of stability factors derived from the Routh Hurwitz stability criteria are discussed, contrasted, and correlated. Since in many instances a variable Y12 is at the designer's disposal (in addition to variable terminations), one is motivated to plot gain and stability contours in the Y12 plane. It will be demonstrated that the maximum stable gain obtainable in the matched condition is four Gunilateral and that for a single stage stable amplifier connected directly to a source and load, it is possible to obtain more gain by adjusting Y12 and relying on the mismatch of source and load conductances to give the desired amount of stability. Since all the above mentioned techniques require two-port parameter data, a section is devoted to the measurement technique of these parameters at various operating points and frequencies. An equivalent circuit of a typical high frequency F.E.T device is presented, with a suggestion as to how the circuit parameters can be measured. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1966
- Accession Number
- AD0483089
Entities
People
- G. J. Luhowy
- K. Knopf
Organizations
- General Dynamics