STUDY OF CONTACT FAILURES IN SEMICONDUCTOR DEVICES.
Abstract
A study and investigation was made of the effects of intermetallic diffusion, compound formation, and solid state reactions occuring at ohmic contact interfaces on reliability of semiconductor devices and materials. The intent of this study was to make available information on activation energies and reaction kinetics of the principal failure mechanisms occurring in semiconductor or ohmic contacts for application to long term reliability prediction and testing techniques. Material systems studied included metal interconnections and terminations common to semiconductor devices, thin-film components and integrated silicon circuits. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1966
- Accession Number
- AD0483847
Entities
People
- George L. Schnable
- Ralph S. Keen