SOLID STATE PHASE SHIFTER.
Abstract
This report describes the research activity on PIN diodes and the development of an X-band phase shifter technique. PIN diodes were developed with a resistance of less than 1 ohm at 100 ma forward current, junction capacitance of less than 1/2 pf, and reverse breakdown voltages of greater than 700 volts. The phase shifter developed gave 360 deg of phase shift in 26 equal steps, was tested at 5 kw of peak power and 20 watts of average power, and had 2.8 db of loss. The phase shifter required only 1 PIN diode per phase shift step and would switch in less than 100 nanoseconds. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1966
- Accession Number
- AD0483848
Entities
People
- E. Hickey
- R. Pettai