FAILURE MECHANISMS IN SEMICONDUCTOR DIODES.
Abstract
This is the second semi-annual report of a three year program to investigate the physical and chemical mechanisms which contribute to long term degradation of diode parameters. The program includes work elements of isolation of the mechanisms, establishment of the kinetic rates, determination of probability of occurrence factors for processing variables, and the proposal and verification of deterministic and probabilistic mathematical models including these factors. The models are to be suitable for computer programming and are to enable the prediction of life performance under normal and accelerated stress conditions. This report contains discussion of diode degradation models. A model is presented to account for ion motion under reverse bias. This model agrees very well with the experimentally observed data. Models covering other aspects of the diode, such as forward current responses discussed and formulated in a preliminary form. The report discusses the reverse bias testing of the diodes. The results of several experimental techniques are presented which involved both the stressing of devices to obtain degradation and the curing of the degraded devices. The experimental results indicated that the rate of degradation was dependent on temperature, and that the amount of degradation was dependent on the reverse stress voltage.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1966
- Accession Number
- AD0484065
Entities
People
- A. Fox
- A. Poe
- A. Roesch
- E. A. Herr
Organizations
- General Electric