MICROWAVE DIODE RESEARCH.
Abstract
The work described in this report is part of a broad program of continuing theoretical and experimental studies to achieve improved microwave semiconductor diodes and combination microwave devices. Of immediate particular interest is the research and development effort directed toward clarifying the relationship between structure and behavior of avalanche transit-time diode oscillators and the improvement of their microwave performance. Developmental work has resulted in fabrication of diode oscillators from bulk silicon which have the Read impurity profile, and are capable of CW operation in the 5-to-6- GHz range. However, the power output and efficiency obtained to date are considerably less than expected, and diodes are being studied further to explain the results. The report gives a study of the feasibility of making diode oscillators in germanium. The study was initiated to increase the understanding of the relationship between structure and performance of IMPATT (IMPact Avalanche Transit Time) oscillators. Germanium is of some interest because of the sharper knee of the carrier-velocity-versus-field curve, which should result in useful oscillators at relatively low bias voltages. Diode oscillators have been fabricated in germanium which exhibit CW operation at 0.5 per cent efficiency and with CW output power of 9.3 mW in the frequency range near 7 GHz.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1966
- Accession Number
- AD0484748
Entities
People
- D. F. Ciccolella
- M. E. Lowe
- R. W. Ralston