PROTON CORRELATION STUDIES
Abstract
The radiation effects of high-energy protons and electrons on germanium and silicon have been studied. The influence of the damage on the Hall effect and minority carrier lifetime produced by 1.5-, 2.3-, 5-, and 30-MeV electronis is compared with that produced by 30- and 50-MeV protons. The experimental results are directly compared with the theoretical predictions of the damage. It is concluded that the higher-energy recoils resulting from the proton irradiations are more effective in producing damage than those resulting from the electron irradiations, based on the predictions of the total number of the defects that different types of particles are expected to produce. The reason for this may be that the higher-energy recoils produce displacements which are separated farther and thereby influence the measured properties in a different manner. Complexities in correlating proton and electron damage which arise from the influence of impurities and defect motion during irradiation are discussed. A proton simulation based on an admixture of electrons and reactor neutrons is discussed theoretically.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1966
- Accession Number
- AD0486487
Entities
People
- E. G. Wikner
- M. E. Wyatt
- V. A. J. Van Lint
Organizations
- General Dynamics