MICROWAVE TRANSISTORS.
Abstract
Crystal growth technique for preparing starting crystals used in fabricating NPN planar Ge transistors is described. Experimental procedures used in growing p-type epitaxial layers are given. Base formation techniques are described, and emitter and emitter-contact problems are discussed. Epitazxial base, planar NPN Ge transistors have been fabricated using these technologies. A process is described which can be used to fabricate epitaxial-base or double-diffused transistors, and a resistance test pattern has been designed to allow measurement of the components of base resistance. A study of power dissipation with emitter area has been made. Results of a microwave measurements study program are summarized. A tuning range of 500 MHZ has been obtained at S-band using a parallel type varactor tuned teflon-fiberglass prototype circuit. Design curves for the series tuned varactor controlled oscillator have been developed which show the optimum tank component specifications for this type of oscillator. Ceramic parallel tuned oscillators have been fabricated and preliminary evaluation is reported. Characterization of the GaAs and Si mixer diodes is in progress. Measurement of the RF impedance has indicated that the RF transformers will have to be redesigned. Filter designs suitable for the mixer are being considered. Characterization of L-148 transistors at S-band has been started. These transistors will be used in the prototype amplifier design at 1.7 to 2.4 GHz. Jigs and test procedures suitable for measuring S-parameters at 2.5 GHz are discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1966
- Accession Number
- AD0486669
Entities
People
- Dave Boone
- George Johnson
- Julius Lange
Organizations
- Texas Instruments