FOUR LAYER DIODE DEVELOPMENT PROGRAM.

Abstract

This final report describes the design, development, fabrication and characterization of a high current, high voltage silicon four-layer diode. The main feature of the new four-layer diode is a voltage-current characteristic which is, prior to switching, similar to that of an avalanche diode. This property is achieved by short-circuiting one emitter-base junction. The short-circuiting takes place over the entire area in order to maintain uniform current conduction. Devices switching at 1000 V or higher, with peak pulse current capability of 1000 A or more are described. Since series operation of many devices is possible without complicated dividing networks, the complexity of pulse modulator circuitry is reduced, and resonantly charged circuits can exhibit a high degree of operating reliability and temperature insensitivity. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1966
Accession Number
AD0486686

Entities

People

  • J. Beaudouin
  • W. Schroen

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Avalanche Diodes
  • Diodes
  • Fabrication
  • High Voltage
  • Modulators
  • Reliability
  • Switching
  • Voltage

Readers

  • Electrical Engineering
  • Semiconductor Device Technology