X-BAND SOLID STATE POWER SOURCE.
Abstract
This report describes a program to develop a small, highly efficient, X-Band solid state source operating in the 8.5 to 9.0 gc and 10.0 to 10.5 gc frequency ranges. The design of these sources entailed the development of transistors for high-power, high-frequency fundamental oscillators; high-efficiency diode multiplier circuits; and integration of the oscillators and multipliers into X-Band sources. Transistors were developed that provided 1 watt of RF power at 1 gc with 40 to 60% conversion efficiency. Efficient high-power harmonic generation silicon diodes were developed. Test fixtures were designed to test diodes as harmonic generators and to measure the required circuit impedances. Impedance matching filter circuits were designed for the test diodes. Use of these circuits provided high efficiency X-Band harmonic generators with adequate bandwidth. Impedance matching techniques are discussed for circuits that use combline filters, and design equations are given for the incorporation of an impedance matching stub into such filters. Solid state signal sources were developed that deliver more than 50 mw of outpower across bandwidths wider than 200 mc at X-Band. The signal sources are single-screw tunable over their operating band. The problems involved and the empirical methods used are described in detail. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1966
- Accession Number
- AD0487139
Entities
People
- Richard A. Henschke
- Robert L. Orrick