RELIABILITY PHYSICS STUDIES ON TRANSISTORS.
Abstract
This report is divided into two main sections, both concerned with reliability physics studies on transistors. The first part describes investigations of two surface failure modes, namely surface breakdown phenomena in silicon planar devices, and effects of mobile surface ions located on silicon oxide surfaces. The surface breakdown voltage of a diode can be altered by non-equilibrium carriers which are generated by external illumination or moving in surface channels. A model is investigated which considers the non-equilibrium carriers as additional charges in the space charge region. According to this model, the maximum reduction of breakdown voltage is achieved when the external light spot is shining on the edge of the space charge region. Calculations are presented concerning the influence of non-equilibrium carriers on the breakdown voltage. The investigations of mobile surface ions were concentrated on measurements of the accumulation and the decay of surface ions as a function of time and position as to the junction. The influence of chemical treatment has been studied in detail. Measurements have been performed comparing QA and QK charge values with shifts of the capacitance-voltage curve. Parameters of these measurements were oxide thickness, oxide preparation, and temperature. The results have a direct bearing on the reliability of MOS structures and oxide protected devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1966
- Accession Number
- AD0487386
Entities
People
- D. Farrington
- P. G. G. Van Loon
- R. Woodruff
- W. Schroen