PROTON AND ELECTRON IRRADIATION OF N/P SILICON SOLAR CELLS,
Abstract
The radiation degradation data for ten ohm-cm N/P silicon solar cells which existed at the initiation of this test program was in need of further substantiation and improvement. A test program was thus commenced which would provide complete and reliable performance data for the support of the power system design and the assurance of the system's reliability. Solar cells were irradiated with electrons with four energies and protons with three energies. Comparable cells produced by four different manufacturers were included. Solar cell/cover/adhesive composite samples were electron-irradiated. I-V characteristics were obtained at intermediate, as well as final, total flux levels. The desired test data were obtained with a high degree of accuracy. The cells of the four manufacturers were substantially equal in radiation tolerance. Little difference was noted between the performance of 1 and 10 ohm-cm cells. It was concluded that only power measurements are valid as criteria for relative power system degradation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 12, 1965
- Accession Number
- AD0487633
Entities
People
- D. L. Reynard
Organizations
- Lockheed Martin Missiles and Space