THE DIFFUSION LENGTHS OF ELECTRONS AND HOLES IN GAAS.
Abstract
The short-circuit current of both diffused and n-type metal semiconductor junctions during 2 MeV electron irradiation was measured. The results indicate that electron diffusion length is proportional to the reciprocal of the square root of the donor concentration. The electron diffusion length ranges from 20 microns for lightly doped diodes to 2 microns for heavily doped diodes. The hole diffusion lengths are less than 1.0 micron in heavily doped surface barrier diodes. The thickness of the active radiative recombination region for diffused diodes under forward bias was measured and compared with the short-circuit current results. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1966
- Accession Number
- AD0487704
Entities
People
- L. W. Aukerman
- M. F. Millea
- M. Mccoll
Organizations
- The Aerospace Corporation