PHONON INTERACTIONS IN CRYSTALS.
Abstract
A microscopic free energy function for antiferroelectrics has been derived as a power series in the complete group (G) of atomic displacements compatible with the translation group of the antiferroelectric phase. The atomic displacements in the antiferroelectric phase corresponding to extrema of the free energy form subgroups of G and give rise to a net polarization. The attenuation of phonons, both microwave ultrasonic and thermal, in lightly doped n-Ge and n-Si is interpreted in terms of a relaxation process of electrons bound to donors. Heat pulses have been observed in single crystal gallium in the temperature range 1.8-4 K. The temperature dependence of the electron-phonon mean free path obtained from the data is approximately T to the -3.3 + or - .3 power. The largest electron transport velocity we measured was approximately 4 times 10 to the 7th power cm/sec and is an order of magnitude faster than velocities observed in other metal crystals reported earlier. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 14, 1966
- Accession Number
- AD0488054
Entities
People
- M. Pomerantz
- N. S. Shiren
- P. B. Miller
- R. J. Von Gutfeld
Organizations
- IBM Thomas J. Watson Research Center