APPLICATION OF FIELD-EFFECT TRANSISTORS TO R-F POWER GENERATION.

Abstract

Field effect transistors have several characteristics which are distinct from those of standard bipolar transistors. In this paper a study is made to see if any of these characteristics can be advantageously utilized to generate r-f power. A conventional class-C FET r-f power amplifier is analyzed following a semigraphical method similar to that used for vacuum tubes. Some advantageous characteristics of the device are discussed along with some drawbacks. The applicability of FETs to pulse-excited r-f power generation circuits is investigated and the device limitations in this field of application are discussed. Finally, the combined use of an FET and a conventional bipolar transistor, to overcome the respective limitations, in an efficient r-f power generation circuit is studied. A practical working model of this hybrid circuit was built to illustrate its advantages. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1966
Accession Number
AD0488342

Entities

People

  • Pak Won Sim

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Bipolar Junction Transistors
  • Circuits
  • Demographic Cohorts
  • Electron Tubes
  • Electronic Amplifier
  • Field Effect Transistors
  • Hybrid Circuits
  • Microwave Tubes
  • Power Amplifiers
  • Transistor Amplifiers
  • Transistors

Fields of Study

  • Engineering

Readers

  • Electronics Engineering
  • Systems Analysis and Design