RESEARCH AND DEVELOPMENT OF LOCALIZED DEFECTS AND HOT SPOTS IN HIGH VOLTAGE PNPN INVERTER SWITCHES.

Abstract

This report deals with the research and development conducted during the investigation of localized defects and hot spots in high voltage p-n-p-n inverter switches. Precipitation in silicon, poisoning phenomena, gold diffusion irregularities, spiking, and resistivity changes, all of which are related to the problem of developing high-voltage, high-speed switches, are discussed, as well as current construction due to the design of a p-n-p-n structure.

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1966
Accession Number
AD0489530

Entities

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Construction
  • Diffusion
  • High Voltage
  • Hot Spots
  • Inverters
  • Poisoning
  • Precipitation
  • Voltage

Readers

  • Electrical Engineering
  • Semiconductor Device Technology
  • Theoretical Analysis.