PRODUCTION ENGINEERING MEASURE: RELIABILITY IMPROVEMENT: SILICON ALLOY TRANSISTOR. VOLUME I.
Abstract
Values and controls for silicon resistivity, lifetime, orientation and crystalline perfection were determined. Chip dimensional tolerances were tightened. The mechanical design and methods of assembly were changed to give lower T sub j, to permit higher stressing levels and to insure cleaner junctions. Electrolytic and vibratory etching were developed and optimized. Electrolytic rinsing was introduced. Improved basecoat curing and nitrogen packaging were implemented. A combination of 200 C bake and 400 mw burn-in post seal stabilizing stress was proven optimum. The use of a thermographic phosphor to monitor 100% burnin made this operation statistically significant. Power step stress as a rapid reliability ranking method was shown to be effective. A production run was carried out and the improved reliability of the product demonstrated. A complete process manual, an approved inspection and quality control plan, consolidated production run data (including yields, parameter distributions, and characteristic parameter curves) and photographs of all special equipment are included as required by the contract. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 26, 1963
- Accession Number
- AD0600024
Entities
People
- A. W. Postlethwaite
- L. F. Leary
- R. W. Jones
Organizations
- RTX