Transistor Characterization and Derating for Second Breakdown

Abstract

Two modes attributing to secondary breakdown in transistors have been found - the current and voltage modes. Localized spots due to current constriction as a result of either mode causes an exponential rise in thermal resistance prior to secondary breakdown. These localized secondary breakdown spots have been calculated to be between 900 - 1100 deg C in silicon. The study indicates that the maximum secondary breakdown power is a function of the device design and should be considered in light of other device performance requirements.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1964
Accession Number
AD0600142

Entities

People

  • Bernard Reich
  • Edward B. Hakim

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Critical Temperature
  • Electronics
  • Massachusetts
  • Materials
  • Military Research
  • New Jersey
  • Ordnance Laboratories
  • Physical Properties
  • Resistance
  • Semiconductors
  • Thermal Resistance
  • Transistors
  • United States
  • Virginia
  • Warfare

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Plasma Physics.