EFFECTS OF PLASTIC DEFORMATION, ANNEALING, AND FATIGUE ON THE ELECTRICAL PROPERTIES OF INDIUM ANTIMONIDE.
Abstract
The project was concerned with the effects of plastic deformation, annealing, and fatigue on the electrical properties of the semiconductor indium antimonide. It was anticipated that the large carrier mobilities observed in n-type indium antimonide and the correspondingly large sensitivity to lattice defects could be used as a tool for investigating the effects of lattice disregistry, point defects, dislocations, etc., and to analyze the transport properties in terms of the mechanisms of defect generation and interaction. It was then, also, the purpose of the basic research program to attempt to establish guidelines whereby an understanding of the mechanisms of fatigue might follow. Each of the original objectives was either followed through to the solution of specific problems, or has at least provided a model upon which one may build for more detailed study. (See also PB-159 350). (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 15, 1964
- Accession Number
- AD0600256
Entities
People
- A. H. Clauer
- J. J. Duga
Organizations
- Battelle Memorial Institute