DEVELOPMENT OF AN INTERMEDIATE CAPACITY, HIGHSPEED MAGNETIC FILM MEMORY SYSTEM.
Abstract
The report describes the design and development of a magnetic film memory system with a storage capacity of 4096 bits arranged as 512 words of 8 bits each. The word-organized system has a read-write cycle time of 142 nanoseconds. The storage medium consists of continuous sheets of magnetic film deposited on polished aluminum substrates. The location and size of the storage bits are defined by the intersection of the word and digit-sense conductors. A transistor-current transformer matrix is used to perform word selection and to provide an 800-milliampere, 85-nanosecond base width word drive pulse. A bipolar digit pulse of =200-milliampere, 40-nanosecond base width is used. Current switching is used in the low-level logic circuits. Pertinent memory waveforms along with operating results are given. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1963
- Accession Number
- AD0600271
Entities
People
- H. D. Toombs
- L. A. Delhom
Organizations
- Texas Instruments