ELECTRICAL CHARACTERISTICS OF GRAIN BOUNDARIES IN COMPOUND SEMICONDUCTORS.

Abstract

The principal effort was directed toward the preparation of low-angle grain boundaries in indium antimonide (InSb) and the study of their electrical and galvanomagnetic properties with the ultimate objective of relating these properties to the structure of the boundary. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 28, 1963
Accession Number
AD0600321

Entities

People

  • R. K. Mueller

Tags

DTIC Thesaurus Topics

  • Antimonides
  • Boundaries
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Grain Boundaries
  • Indium
  • Indium Antimonides
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Low Angles
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds

Readers

  • Powder metallurgy of Titanium alloys.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics