A STUDY OF HIGH MODULUS, HIGH STRENGTH FILAMENT MATERIALS BY DEPOSITION TECHNIQUES.

Abstract

Two vapor deposition techniques were tried for the deposition of aluminum oxide filaments. Neither technique produced satisfactory deposits. Silicon carbide filaments were deposited from trichlorosilane and trichloromethylsilane. An x-ray analysis of silicon carbide and boron carbide was also completed. The presence of SiC and B4C was not shown conclusively. Metallographic examinations were made on all filament materials. The titanium compounds showed a crystalline structure while no crystal structure was evident on the other materials. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 15, 1964
Accession Number
AD0600334

Entities

People

  • J. C. Withers
  • L. G. Davies

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Advanced Materials
  • Aluminum Oxides
  • Boron Carbides
  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Crystal Structure
  • Engineered Materials
  • Filaments
  • Materials
  • Oxides
  • Silicon
  • Silicon Carbide
  • Titanium Compounds
  • Vapor Deposition
  • X Rays

Readers

  • Reinforced Composite Materials
  • Thin Film Deposition Science.